Jpn. J. Appl. Phys. 38 (1999) pp. 2028-2032  |Next Article|  |Table of Contents|
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Hybrid Circuit Simulator Including a Model for Single Electron Tunneling Devices

Masaharu Kirihara, Kazuo Nakazato and Mathias Wagner

(Received January 8, 1999; accepted for publication February 5, 1999)

A hybrid circuit simulator has been developed that incorporates elements of single electron devices into the conventional circuit simulator SPICE (Simulation Program with Integrated Circuit Emphasis). The elements can consist of an arbitrary network of tunnel junctions and capacitors, whose characteristics are calculated using a master equation method. By employing the hybrid circuit simulator, we studied a turnstile device feeding the input of a complementary metal-oxide-semiconductor (CMOS) inverter, and were able to more successfully demonstrate the transfer of electrons through the turnstile one by one in SPICE.

URL: http://jjap.jsap.jp/link?JJAP/38/2028/
DOI: 10.1143/JJAP.38.2028

References | Citing Articles (17)

1. For a review, see: D. V. Averin and K. K. Likharev: Single Charge Tunneling, eds. H. Grabert and M. H. Devoret (Plenum, New York, 1992) p. 311.
2. R. A. Smith and H. Ahmed: Appl. Phys. Lett. 71 (1997) 3838[AIP Scitation].
3. A. Ohata, A. Toriumi and K. Uchida: Jpn. J. Appl. Phys. 36 (1997) 1686[JSAP].
4. http://infopad.eecs.berkeley.edu/~icdesign/SPICE/
5. N. Kuwamura, K. Taniguchi and C. Hamaguchi: Denshi Joho Tsushin Gakkai Ronbunshi 77-C-II (1994) 221. Translation: Electron & Commun. Jpn. 77 (1994) Pt. 2, 65.
6. L. R. C. Fonseca, A. N. Korotkov, K. K. Likharev and A. A. Odintsov: J. Appl. Phys. 78 (1995) 3238[AIP Scitation].
7. R. H. Chen, A. N. Korotkov and K. K. Likharev: Appl. Phys. Lett. 68 (1996) 1954[AIP Scitation].
8. C. Wasshuber, H. Kosina and S. Selberherr, IEEE Trans. Computer-Aided Design 16 (1997) 937.
9. S. Amakawa, H. Majima, H. Fukui, M. Fujishima and K. Hoh: IEICE Trans. Electron. E81-C (1998) 21.
10. M. Fujishima, S. Amakawa and K. Hoh: Jpn. J. Appl. Phys. 37 (1998) 1478[JSAP].
11. S. Amakawa: private communication.
12. L. T. Pillage, R. A. Rohrer and C. Visweswariah: Electronic Circuit and System Simulation Methods (McGraw-Hill, New York, 1994).
13. R. M. Kielkowski: Inside SPICE (McGraw-Hill, New York, 1994).
14. Some models of elements in SPICE consist of simple elements; e.g. a MOSFET model consists of resistors, capacitors, diodes and voltage-controlled current sources and has two internal nodes.
15. G. H. Goluv and C. F. Van Loan: Matrix Computations (The Johns Hopkins University Press, London, 1989) p. 557.
16. H. D. Jensen and J. M. Martinis: Phys. Rev. B 46 (1992) 13407[APS].
17. L. J. Geerligs, V. F. Anderegg, P. A. M. Holweg, J. E. Mooij, H. Pothier, D. Esteve, C. Urbina and M. H. Devoret: Phys. Rev. Lett. 64 (1990) 2691[APS].
18. L. R. C. Fonseca, A. N. Korotkov and K. K. Likharev: J. Appl. Phys. 79 (1996) 9155[AIP Scitation].
19. M. Kirihara and K. Taniguchi: IEICE Trans. Electron. E81-C (1998) 57.
20. The precise analysis of how small the time step has to be to ensure a sufficiently small error is rather complicated, but essentially, it has to be much smaller than both the CR time constant of the SET circuit, and the inverse of the applied gate frequency.