Jpn. J. Appl. Phys. 38 (1999) pp. L1000-L1002  |Next Article|  |Table of Contents|
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Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

Hideto Miyake, Atsushi Motogaito and Kazumasa Hiramatsu

(Received May 6, 1999; accepted for publication July 21, 1999)

The effects of reactor pressure on epitaxial lateral overgrowth (ELO) via low-pressure metalorganic vapor phase epitaxy (MOVPE) have been studied in relation to growth temperature. For the ELO GaN on SiO₂ stripes along the <1100> direction of the underlying GaN, on decreasing the reactor pressures from 500 to 40 Torr or increasing the growth temperatures from 950 to 1050°C, the (0001) surfaces become broad and the side walls changed from inclined {1122} surfaces to vertical {1120} surfaces. For the ELO GaN on the stripes along the <1120> direction, the shapes with {1101} facets are independent of the reactor pressure and growth temperature. The ELO of GaN is dominated by the diffusion-limited process.

URL: http://jjap.jsap.jp/link?JJAP/38/L1000/
DOI: 10.1143/JJAP.38.L1000
KEYWORDS:GaN, epitaxial lateral overgrowth (ELO), selective area growth (SAG), metalorganic vapor phase epitaxy (MOVPE), reactor pressure, morphology, diffusion-limited process

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