Jpn. J. Appl. Phys. 38 (1999) pp. L1009-L1011  |Next Article|  |Table of Contents|
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New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy

Takaaki Mano1,2,, Katsuyuki Watanabe1,3, Shiro Tsukamoto1, Hiroshi Fujioka2, Masaharu Oshima2 and Nobuyuki Koguchi1

1National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
2Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
3Department of Material Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

(Received June 25, 1999; accepted for publication July 16, 1999)

Quantum dot (QD) systems for InGaAs/GaAs without a wetting layer have been fabricated on GaAs (001) surfaces by a new self-organized growth method using droplet epitaxy with highly dense Ga droplets. Droplets of InGa alloy with highly dense Ga droplets have been formed by supplying 1) Ga, 2) In and 3) Ga molecular beams, sequentially. These highly dense Ga droplets have successfully prevented the two-dimensional growth of InGaAs during crystallization under As flux supply. In the plan-view transmission electron microscope image, the InGaAs QDs with the density of 7×109 cm-2 are observed. These QDs show a very sharp photoluminescence peak (full width half maximum (FWHM): 21.6 meV) at 946 nm.

URL: http://jjap.jsap.jp/link?JJAP/38/L1009/
DOI: 10.1143/JJAP.38.L1009
KEYWORDS:quantum dots, InGaAs, droplet epitaxy, photoluminescence, transmission electron microscope


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