Jpn. J. Appl. Phys. 38 (1999) pp. L1085-L1086 |Next Article| |Table of Contents|
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A Very Simple Method of Flattening Si(111) Surface at an Atomic Level Using Oxygen-Free Water
Research Center for Photoenergetics of Organic Materials, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
(Received March 1, 1999; accepted for publication July 28, 1999)
Si(111) surfaces were found to be very easily flattened at an
atomic level by immersing the wafers in water, from which
dissolved oxygen was removed by the addition of sulfite ion as
chemical deoxygenator, at room temperature. After the
treatment with this oxygen-free water, the Si(111) surfaces
slightly misoriented in the <112> direction showed straight and
parallel steps and wide terraces under atomic force microscopy
observation. When wafers slightly misoriented in the opposite
direction were treated in the same manner, the steps showed a
characteristic zigzag pattern with an angle of 60°. The steps
that appeared on both surfaces were attributable to monohydride
steps generated on the edge of flat terraces.
KEYWORDS:silicon, surface, flattening, water, oxygen,
ammonium sulfite, atomic force microscopy, infrared absorption
- G. S. Higashi and Y. J. Chabal: Handbook of Semiconductor Wafer Cleaning Technology, ed. W. Kern (Noyes Publications, New Jersey, 1993) p. 433.
- G. S. Higashi, Y. J. Chabal, G. W. Trucks and K. Raghavachari:
Appl. Phys. Lett. 56 (1990) 656[AIP Scitation].
- P. Jakob and Y. J. Chabal:
J. Chem. Phys. 95 (1991) 2897[AIP Scitation].
- S. Watanabe, N. Nakayama and T. Ito:
Appl. Phys. Lett. 59 (1991) 1458[AIP Scitation].
- S. Watanabe, K. Horiuchi and T. Ito:
Jpn. J. Appl. Phys. 32 (1993) 3420[JSAP].
- S. Watanabe and Y. Sugita:
Surf. Sci. 327 (1995) 1[CrossRef].
- M. Matsumura and H. Fukidome: J. Electrochem. Soc. 143 (1996) 2683.
- H. Fukidome, T. Ohno and M. Matsumura: J. Electrochem. Soc. 144 (1997) 679.
- H. Fukdiome and M. Matsumura:
Appl. Surf. Sci. 130–132 (1998) 146[CrossRef].
- K. Usuda and K. Yamada: J. Electrochem. Soc. 144 (1997) 3204.
- T. Komeda, K. Namba and Y. Nishioka:
Jpn. J. Appl. Phys. 37 (1998) L214[JSAP].
- G. J. Pietsch, U. Köhler and M. Henzler:
J. Appl. Phys. 73 (1993) 4797[AIP Scitation].