Jpn. J. Appl. Phys. 38 (1999) pp. L1312-L1314 |Next Article| |Table of Contents|
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Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
Department of Electronic and Control System Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
1Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan
(Received September 1, 1999; accepted for publication September 22, 1999)
Laser crystallized poly-Si thin films were characterized using micro-Raman spectroscopy.
Mapping measurements of the Si optical-phonon line were carried out for large size grains
generated by the super-lateral growth, where the mapping interval was as small as 0.2 µm. It
was found that the spectral intensity is extremely large at ridges located at grain boundaries. The
map of peak-frequency shift indicated that the tensile stress tends to accumulate in grains and
relax at grain boundaries. The map of spectral width revealed the abrupt variation of the
crystalline phase from large-size grains to microcrystals.
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