Jpn. J. Appl. Phys. 38 (1999) pp. L1369-L1371  |Next Article|  |Table of Contents|
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Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process

Keigo Hoshikawa, Xinming Huang, Toshinori Taishi, Tomio Kajigaya¹ and Takayuki Iino¹

(Received September 16, 1999; accepted for publication October 15, 1999)

Dislocation-free silicon crystals have been grown successfully from heavily-boron-doped silicon melts by the Czochralski method without the dislocation-elimination-necking process (Dash neck). A dislocation-free silicon seed of <001> orientation with a boron concentration of about 4×10¹⁹ atoms/cm³ was used to grow a silicon crystal with the same boron concentration. No dislocation was generated in the seed during the dipping process, and no misfit dislocation occurred in the grown crystal. These results show that shoulder and body growth can be started immediately after the seeding process.

URL: http://jjap.jsap.jp/link?JJAP/38/L1369/
DOI: 10.1143/JJAP.38.L1369

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