Jpn. J. Appl. Phys. 38 (1999) pp. L586-L589  |Next Article|  |Table of Contents|
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Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure

Minoru Satoh, Norio Tanaka, Yoshikazu Ueda¹, Shigeo Ohshioand Hidetoshi Saitoh

(Received February 22, 1999; accepted for publication March 24, 1999)

ZnO whiskers were epitaxially grown by a chemical-vapor deposition technique employed at atmospheric pressure. Highly oriented ZnO whiskers grew at a substrate temperature of 550°C on (0001)α-Al₂O₃ substrates with a growth rate of 3.7 nm/s. X-ray diffractometry revealed that the epitaxial relationship between the whiskers and the substrate was determined as ZnO[1010](0001)//Al₂O₃[1210](0001) or ZnO[1210](0001)//Al₂O₃[1010](0001). In addition, the full-width at half maximum value of the (0002) reflection was as low as 0.43°. Images obtained using a scanning electron microscope were analyzed and it was found that the whisker tip likely has a radius of curvature of approximately 20 nm. The typical number density of the whiskers has reached 1.3×10⁵mm^-2.

URL: http://jjap.jsap.jp/link?JJAP/38/L586/
DOI: 10.1143/JJAP.38.L586

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