Jpn. J. Appl. Phys. 38 (1999) pp. L586-L589 |Next Article| |Table of Contents|
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Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure
Department of Chemistry, Nagaoka University of Technology,
1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
1Asahi Chemical Industry Co., Ltd., 1-3-1 Yakoh,
Kawasaki-ku, Kawasaki-city, Kanagawa 210-0863, Japan
(Received February 22, 1999; accepted for publication March 24, 1999)
ZnO whiskers were epitaxially grown by a chemical-vapor deposition technique
employed at atmospheric pressure.
Highly oriented ZnO whiskers grew at a substrate temperature of
550°C on (0001)α-Al2O3 substrates
with a growth rate of 3.7 nm/s.
X-ray diffractometry revealed that the epitaxial relationship
between the whiskers and the substrate was determined
In addition, the full-width at half maximum value of the (0002) reflection was
as low as 0.43°. Images obtained using a scanning electron microscope were analyzed
and it was found that the whisker tip likely has
a radius of curvature of approximately 20 nm.
The typical number density of the whiskers has reached 1.3×105mm-2.
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