Jpn. J. Appl. Phys. 39 (2000) pp. 351-356 |Next Article| |Table of Contents|
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Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
Department of Electrical and Electronic Engineering, Yamaguchi University,
Tokiwadai 2-16-1, Ube 755-8611, Japan
1Microelectronics Research Center, SANYO Electric Co., Ltd., 180, Anpachi-cho,
Anpachi-gun, Gifu 503-0116, Japan
(Received November 12, 1998; accepted for publication November 15, 1999)
Recrystallization of polycrystalline silicon (poly-Si) film by excimer laser
annealing (ELA) is discussed by considering the experimental results that the three
stages of nucleation, textured grain growth and secondary grain growth were observed.
Although the phenomenon of nucleation in the amorphous silicon (a-Si) is understood by
considering crystallization from the super cooled liquid, the growth mechanisms of the
textured grain and secondary grain are not understood by this, because the melting
point of poly-Si which has already been formed on the entire surface during these
growth stages is higher than that of a-Si. The recrystallization mechanism considering
the dislocation movement is introduced to investigate the present phenomenon. It also
clarifies the reason why secondary grain growth occurs under the critical conditions of
laser irradiation energy and shot number. The feasibility of nucleation through the
super cooled liquid is also discussed.
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