Jpn. J. Appl. Phys. 39 (2000) pp. L1029-L1031 |Next Article| |Table of Contents|
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Letter
High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor
Ching-Sung Lee,
Wei-Chou Hsu,
Yen-Wei Chen,
Yung-Cha Chen and
Hir-Ming Shieh1
Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan, Taiwan, Republic of China
1Department of Electronic Engineering, Kung-Shan Institute of Technology, Tainan, Taiwan, Republic of China
(Received May 29, 2000; accepted for publication July 12, 2000)
A δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor exhibiting high breakdown voltage at high temperature and excellent pinch-off properties has been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The gate-to-drain breakdown voltages are as high as 62 V (300 K) and 42 V (500 K) contributed by δ-doping the high band-gap In0.49Ga0.51P insulator layer. An improved gate voltage swing of about 2.3 V is also achieved. Furthermore, the device demonstrated excellent pinch-off properties when a carrier-retarding AlGaAs buffer layer was inserted. The above results indicate that the present structure is promising for high power and high temperature ambient device applications.
URL:
http://jjap.jsap.jp/link?JJAP/39/L1029/
DOI: 10.1143/JJAP.39.L1029
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