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Jpn. J. Appl. Phys. 39 (2000) pp. L1115-L1117  |Next Article|  |Table of Contents|
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Dislocation-Free Czochralski Si Crystal Growth without Dash Necking Using a Heavily B and Ge Codoped Si Seed

Xinming Huang, Toshinori Taishi, Ichiro Yonenaga¹ and Keigo Hoshikawa

Faculty of Education, Shinshu University, Nishinagano, Nagano 380-8544, Japan
¹Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577, Japan

(Received September 20, 2000; accepted for publication October 6, 2000)

Dislocation-free Czochralski Si crystals were grown from undoped Si melt without Dash necking using heavily B and Ge codoped Si seeds 15×15 mm² in cross-section. The concentration of B in codoped Si seeds was 2×10¹⁹ atoms/cm³ and that of Ge 8×10¹⁹ atoms/cm³. Dislocations due to thermal shock did not form in heavily B-doped seeds nor due to lattice misfit in grown crystals despite the very different B concentration in seeds and grown crystals. This indicates that B and Ge codoping adjusted the lattice constant of Si seeds to that of grown crystals.

URL: http://jjap.jsap.jp/link?JJAP/39/L1115/
DOI: 10.1143/JJAP.39.L1115

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References | Citing Articles (10)

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