Jpn. J. Appl. Phys. 4 (1965) pp. 850-853 |Next Article| |Table of Contents|
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Preparation of Ge-GaAs Heterojunctions by Vacuum Evaporation
Department of Electronics, Tokyo Institute of Technology
(Received July 7, 1965)
Heterojunctions have been made by depositing Ge epitaxially on GaAs substrate by vacuum evaporation. The crystalline structures are examined by electron diffraction. Some electrical and photoelectrical characteristics are investigated, which are well consistent with those prepared by vapor growth. The good characteristics of heterojunction can be obtained at substrate tempepatures in the vicinity of 800°C.
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