Quick Jump

Jpn. J. Appl. Phys. 40 (2001) pp. 110-111  |Next Article|  |Table of Contents|
|Full Text PDF (41K)| |Buy This Article|

Short Note

Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illumination-Collection Mode

Akio Kaneta¹, Tomoaki Izumi¹, Koichi Okamoto¹, Yoichi Kawakami¹, Shigeo Fujita¹, Yoshihito Narita², Tsutomu Inoue² and Takashi Mukai³

¹Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan
²Spectroscopic Division, JASCO Corporation, 2967-5 Ishikawa-cho, Hachioji, Tokyo 192-8537, Japan
³Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

(Received July 21, 2000; accepted for publication September 25, 2000)

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW)-based light-emitting diode structure by near-field optical microscopy under the illumination-collection mode. The obtained PL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.

URL: http://jjap.jsap.jp/link?JJAP/40/110/
DOI: 10.1143/JJAP.40.110
KEYWORDS:InGaN, SNOM, illumination-collection mode, PL mapping image, spatial inhomogeneity

|Full Text PDF (41K)| |Buy This Article| Citation: Plain Text BiBTeX EndNote(RIS) RSS

---

References | Citing Articles (15)

1. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. 34 (1995) L797[JSAP].
2. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332[JSAP].
3. T. Mukai, H. Narimatsu and S. Nakamura: Jpn. J. Appl. Phys. 37 (1998) L479[JSAP].
4. T. Mukai, D. Morita and S. Nakamura: J. Cryst. Growth 189/190 (1998) 788.
5. Y. Narukawa, S. Saijou, Y. Kawakami, S. Fujita, T. Mukai and S. Nakamura: Appl. Phys. Lett. 74 (1999) 558[AIP Scitation].
6. S. Chichibu, T. Azuhata, T. Sota and S. Nakamura: Appl. Phys. Lett. 69 (1996) 4188[AIP Scitation].
7. Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita and Sg. Fujita: Appl. Phys. Lett. 70 (1997) 981[AIP Scitation].
8. S. Chichibu, K. Wada and S. Nakamura: Appl. Phys. Lett. 71 (1997) 2346[AIP Scitation].
9. P. A. Crowell, D. K. Young, S. Keller, E. L. Hu and D. D. Awschalom: Appl. Phys. Lett. 72 (1998) 927[AIP Scitation].
10. A. Vertikov, M. Kuball, A. V. Nurmikko, Y. Chen and S.-Y. Wang: Appl. Phys. Lett. 72 (1998) 2645[AIP Scitation].
11. A. Vertikov, A. V. Nurmikko, K. Doverspike, G. Bulman and J. Edmond: Appl. Phys. Lett. 73 (1998) 493[AIP Scitation].
12. A. Vertikov, I. Ozden and A. V. Nurmikko: Appl. Phys. Lett. 74 (1999) 850[AIP Scitation].
13. D. K. Young, M. P. Mack, A. C. Abare, M. Hansen, L. A. Coldren, S. P. Denbaars, E. L. Hu and D. D. Awschalom: Appl. Phys. Lett. 74 (1999) 2349[AIP Scitation].
14. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) L1705[JSAP].
15. T. Saiki, K. Nishi and M. Ohtsu: Jpn. J. Appl. Phys. 37 (1998) 1638[JSAP].

---