Jpn. J. Appl. Phys. 40 (2001) pp. 1367-1369  |Next Article|  |Table of Contents|
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β-FeSi₂ Single Crystals Grown from Solution

Haruhiko Udono and Isao Kikuma

(Received July 14, 2000; accepted for publication November 22, 2000)

We have grown high-quality β-FeSi₂ bulk single crystals by a temperature gradient solution growth method using Ga solvent. Polyhedral shaped bulk crystals with clear facet planes were obtained below the growth temperature of 900°C. Laue observation confirmed that crystals are high-quality single crystals without twins. Full-width at half maxim of the X-ray rocking curve at β-FeSi₂ (800) reflection was 53 arcsec. The conduction was p-type and the resistivity was 0.03–0.04 Ωcm at room temperature.

URL: http://jjap.jsap.jp/link?JJAP/40/1367/
DOI: 10.1143/JJAP.40.1367

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