Quick Jump

Jpn. J. Appl. Phys. 40 (2001) pp. 2506-2507  |Next Article|  |Table of Contents|
|Full Text PDF (53K)| |Buy This Article|

Short Note

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

Jeonghee Cho^1,2, Seunghee Han², Yeonhee Lee², Ok Kyung Kim¹, Gon-Ho Kim¹, Young-Woo Kim^1,2, Hyuneui Lim² and Hye Sun Jung²

¹Department of Physics, Hanyang University-Ansan, Kyunggi-do 425-791, Korea
²Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Korea

(Received September 20, 2000; accepted for publication December 11, 2000)

Ultrashallow p⁺/n junctions fabricated by plasma source ion implantation (PSII) were studied. After as-implanted samples were spike-annealed at 1000°C and annealed for 5 s at 1000°C, for samples with a background doping concentration of 6×10¹⁷ #/cm³, ultrashallow junction depths of 548 Å and 745 Å, respectively, could be obtained with an implant energy of 0.5 keV. Also, sheet resistances of 330 Ω/\Box and 228 Ω/\Box were acquired, respectively. These junction depths and sheet resistances obtained by the PSII process were found to satisfy 0.15 µm metal oxide semiconductor field effect transistor (MOSFET) applications.

URL: http://jjap.jsap.jp/link?JJAP/40/2506/
DOI: 10.1143/JJAP.40.2506

|Full Text PDF (53K)| |Buy This Article| Citation: Plain Text BiBTeX EndNote(RIS) RSS

---

References | Citing Article (1)

1. J. R. Conrad: U.S. Patent 4 764 349, 1988.
2. B. L. Yang, E. C. Jones, N. W. Cheung, J. Shao, H. Wong and Y. C. Cheng: Microelectron. Reliab. 38 (1998) 1489.
3. S. Han, Y. Lee, H. Kim, G.-H. Kim, J. Lee, J.-H. Yoon and G. Kim: Surf. Coat. Technol. 93 (1997) 261.
4. International Technology Roadmap for Semiconductors (Sematech, 1999).
5. J. Park, Y.-J. Huh and H. Hwang: Appl. Phys. Lett. 74 (1999) 1248[AIP Scitation].
6. B. Mizuno, I. Nakayama, M. Tahase, H. Nakaoka and M. Kubota: Surf. Coat. Technol. 85 (1996) 51.
7. E. Rimini: Ion Implantation: Basic to Device Fabrication (Kluwer Academic, Boston, 1995) Chaps. 1, 6 and 7.
8. M. B. Huang, T. W. Simpson and I. V. Mitchell: Appl. Phys. Lett. 70 (1997) 1146[AIP Scitation].
9. S. Solmi and M. Bersani: J. Appl. Phys. 87 (2000) 3696[AIP Scitation].
10. S. Solmi: private communication.

---