Jpn. J. Appl. Phys. 40 (2001) pp. 3049-3054 |Next Article| |Table of Contents|
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A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan
(Received September 21, 2000; accepted for publication February 1, 2001)
A new nucleation-site-control method has been proposed for excimer-laser crystallization, where a cross-coupled phase shifter is placed on the sample surface. High thermal conductivity of molten Si flattens its temperature distribution shortly after laser-light irradiation, and, in turn, confines a low-temperature Si region to a very narrow area. Since nucleation can take place only in this narrow area of unmolten Si, not only is the number of nuclei limited to unity, but also the position of a nucleus can be determined. The usefulness of the proposed method is investigated theoretically and experimentally. A single grain as long as 5 µm in diameter was formed at the desired position.
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