Jpn. J. Appl. Phys. 40 (2001) pp. 3075-3081  |Next Article|  |Table of Contents|
|Full Text PDF (1229K)| |Buy This Article|

Wavelength Dependence of InGaN Laser Diode Characteristics

Shin-ichi Nagahama, Tomoya Yanamoto, Masahiko Sano and Takashi Mukai

(Received December 7, 2000; accepted for publication February 5, 2001)

InGaN multi-quantum-well-structure laser diodes (LDs) with an emission wavelength of longer than 420 nm were grown on both an epitaxially laterally overgrown GaN (ELOG) substrate and an ELOG on a free-standing GaN substrate by a metaorganic chemical vapor deposition method. The wavelength dependence of InGaN LD characteristics was investigated. It was found that there was a strong relationship between the threshold current density and the emission wavelength of LDs. The LDs with the emission wavelength of 450 nm grown on the ELOG on a free-standing GaN substrate were demonstrated. The threshold current density and voltage of these LDs were 2.8 kA/cm² and 4.5 V, respectively. The estimated lifetime was approximately 5000 h under 50°C continuous-wave operation at an output power of 5 mW.

URL: http://jjap.jsap.jp/link?JJAP/40/3075/
DOI: 10.1143/JJAP.40.3075

References | Citing Articles (39)

1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332[JSAP].
2. T. Mukai, H. Narimatsu and S. Nakamura: Jpn. J. Appl. Phys. 37 (1998) L479[JSAP].
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74[JSAP].
4. T. Asano, K. Yanashima, T. Asatsuma, T. Hino, T. Yamaguchi, S. Tomiya, K. Funato, T. Kobayashi and M. Ikeda: Phys. Status Solidi A 176 (1999) 23[CrossRef].
5. K. Itaya, M. Onomura, J. Nishino, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi and M. Ishikawa: Jpn. J. Appl. Phys. 35 (1996) L1315[JSAP].
6. G. E. Bulman, K. Doverspike, S. T. Sheppard, T. W. Weeks, H. S. Kong, H. M. Dieringer, J. A. Edmond, J. D. Brown, J. T. Swindell and J. F. Schetzena: Electron. Lett. 33 (1997) 1556[AIP Scitation].
7. A. Kuramata, S. Kubota, R. Soejima, K. Domen, K. Horino, P. Hacke and T. Tanahashi: Jpn. J. Appl. Phys. 38 (1999) L481[JSAP].
8. M. Kuramoto, C. Sasaoka, Y. Hisanaga, A. Kimura, A. Yamaguchi, H. Sunakawa, N. Kuroda, M. Nido, A. Usui and M. Mizuta: Jpn. J. Appl. Phys. 38 (1999) 2753[JSAP].
9. H. Katoh, T. Takeuchi, C. Anbe, R. Mizumoto, S. Yamaguchi, C. Wetzel, H. Amano, I. Akasaki, Y. Kaneko and N. Yamada: Jpn. J. Appl. Phys. 37 (1998) L444[JSAP].
10. S. Kijima, S. Uchida, T. Tojyo, K. Yanashima, T. Asano, T. Hino and M. Ikeda: Ext. Abstr. (47th Spring Meet. 2000), Japan Society of Applied Physics and Related Societies, 31p-YQ-8.
11. S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and T. Mukai: Jpn. J. Appl. Phys. 38 (1999) L226[JSAP].
12. A. Usui, H. Sunakawa, A. Sakai and A. Yamaguchi: Jpn. J. Appl. Phys. 36 (1997) L899[JSAP].
13. O. H. Nam, M. D. Bremser, T. Zheleva and R. F. Davis: Appl. Phys. Lett. 71 (1997) 2638[AIP Scitation].
14. S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho and T. Mukai: Jpn. J. Appl. Phys. Lett. 39 (2000) L647[JSAP].
15. S. Nakamura, M. Senoh, S. Nagahama, T. Matsushita and T. Mukai: Appl. Phys. Lett. 76 (2000) 22[AIP Scitation].
16. For a review, see S. Nakamura and G. Fasol: The Blue Laser Diode (Springer-Verlag, Heidelberg, 1997).
17. Y. Narukawa, Y. Kawakami, M. Funato, Shizuo Fujita, Shigeo Fujita and S. Nakamura: Appl. Phys. Lett. 70 (1997) 981[AIP Scitation].
18. S. Chichibu, T. Azuhata, T. Sota and S. Nakamura: Appl. Phys. Lett. 70 (1997) 2822[AIP Scitation].
19. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki: Jpn. J. Appl. Phys. 36 (1997) L382[JSAP].
20. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano and I. Akasaki: Appl. Phys. Lett. 73 (1998) 1691[AIP Scitation].