Jpn. J. Appl. Phys. 40 (2001) pp. 332-337  |Next Article|  |Table of Contents|
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Limitation of Nitrogen Incorporation into the Hydrogenated Amorphous Carbon Nitride Films Formed from the Dissociative Excitation Reaction of CH₃CN

Haruhiko Ito, Noriko Ito, Tsutomu Takahashi, Daisuke Tanaka, Hirosuke Takamatsu and Hidetoshi Saitoh

(Received July 10, 2000; accepted for publication October 12, 2000)

High-resolution CN(B²Σ⁺–X²Σ⁺) and CH(A²Δ–X²Π) emission spectra were observed for the dissociative excitation reaction of CH₃CN with the microwave-discharge flow of Ar for synthesizing hydrogenated amorphous carbon nitride (a-CN_x:H) films. The simulation analysis of these spectra revealed that the relative number density of CH(A) to that of CN(B), N_CH(A)/N_CN(B), was strongly dependent on the pressure of Ar, P_Ar, in the range of P_Ar=0.1–0.8 Torr. The P_Ar-dependence of N_CH(A)/N_CN(B) showed a strongly negative correlation with that of the [N]/([N]+[C]) ratio obtained in our previous structural analysis of the films [Saitoh et al.: Jpn. J. Appl. Phys. 39 (2000) 1258]. This correlation was fully explained in terms of the consumption of the CN radical by the hydrogen-abstraction reaction from the film surface, preventing the incorporation of the nitrogen atoms into the a-CN_x:H films.

URL: http://jjap.jsap.jp/link?JJAP/40/332/
DOI: 10.1143/JJAP.40.332

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