Jpn. J. Appl. Phys. 40 (2001) pp. 371-375  |Table of Contents|
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Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method

Yoshifumi Yoshioka, Tetsuya Ikuta, Toshiya Taji, Kouzou Mizobata, Takayoshi Shimura and Masataka Umeno

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  1. Japanese Journal of Applied Physics 41 (2002) 2262
    In situ Ellipsometric Measurement during Growth of Ge on Si(111) by Molecular Beam Epitaxy
    Tetsuya Ikuta, Yoshifumi Yoshioka, Satoshi Kamei, Hiroyuki Hayashi, Takayoshi Shimura and Masataka Umeno


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