Jpn. J. Appl. Phys. 40 (2001) pp. 371-375
|Table of Contents|
|Abstract| |Full Text PDF (1313K)| |Buy This Article|
Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method
Yoshifumi Yoshioka, Tetsuya Ikuta, Toshiya Taji, Kouzou Mizobata, Takayoshi Shimura and Masataka Umeno
Articles citing this article
The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.
-
Japanese Journal of Applied Physics 41 (2002) 2262
- In situ Ellipsometric Measurement during Growth of Ge on Si(111) by Molecular Beam Epitaxy
-
- Tetsuya Ikuta, Yoshifumi Yoshioka, Satoshi Kamei, Hiroyuki Hayashi, Takayoshi Shimura and Masataka Umeno