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Jpn. J. Appl. Phys. 40 (2001) pp. L1235-L1237  |Next Article|  |Table of Contents|
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Letter

Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Using La2O3 Thin Film as an Insulator

Dong-Jin Won, Chae-Hyun Wang and Doo-Jin Choi

Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Korea

(Received March 9, 2001; accepted for publication September 11, 2001)

We fabricated a novel metal/ferroelectric/insulator/semiconductor (MFIS) structure using the PbTiO3 film and La2O3 film prepared by metal organic chemical vapor deposition as a ferroelectric and an insulator, respectively. The dielectric constant (k) of the 420 Å La2O3 film was about 28. The leakage current density was about 3×10-6 A/cm2 at +5 V. The MFIS using an Al/PbTiO3 (3600 Å)/La2O3 (280 Å)/Si configuration showed clockwise C–V hysteresis. The memory window increased from 0.3 to 2.6 V with increasing bias from 2 to 10 V. In this letter we propose the La2O3 film as an alternative insulator layer in the MFIS structure.

URL: http://jjap.jsap.jp/link?JJAP/40/L1235/
DOI: 10.1143/JJAP.40.L1235


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