Jpn. J. Appl. Phys. 40 (2001) pp. L1235-L1237  |Table of Contents|
|Abstract| |Full Text PDF (57K)| |Buy This Article|

Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Using La₂O₃ Thin Film as an Insulator

Dong-Jin Won, Chae-Hyun Wang and Doo-Jin Choi

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

1. Journal of Materials Science 42 (2007) 652

   The electrical and interface properties of metal-ferroelectric (lanthanum substituted bismuth titanate: BLT)-insulator-semiconductor (MFIS) structures with various insulators

   S. W. Kang, W. K. Kim, and S. W. Rhee

2. Chemical Vapor Deposition 12 (2006) 158

   Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

   K. Kukli, M. Ritala, V. Pore, M. Leskelä, T. Sajavaara, R.?I. Hegde, D.?C. Gilmer, P.?J. Tobin, A.?C. Jones, and H.?C. Aspinall

3. Journal of Materials Chemistry 16 (2006) 3854

   Liquid injection ALD and MOCVD of lanthanum aluminate using a bimetallic alkoxide precursor

   Jeffrey M. Gaskell, Anthony C. Jones, Helen C. Aspinall, Szymon Przybylak, Paul R. Chalker, Kate Black, Hywel O. Davies, Pouvanart Taechakumput, Stephen Taylor, and Gary W. Critchlow

4. Journal of Materials Chemistry 15 (2005) 3384

   Deposition of LaAlO3 films by liquid injection MOCVD using a new [La–Al] single source alkoxide precursor

   Troy D. Manning, Yim Fun Loo, Anthony C. Jones, Helen C. Aspinall, Paul R. Chalker, Jamie F. Bickley, Lesley M. Smith, and Gary W. Critchlow

5. Applied Surface Science 233 (2004) 91

   Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition

   Jin-Bo Cheng, Ai-Dong Li, Qi-Yue Shao, Hui-Qin Ling, Di Wu, Yuan Wang, Yong-Jun Bao, Mu Wang, Zhi-Guo Liu, and Nai-Ben Ming

6. Electrochemical and Solid-State Letters 6 (2003) F17

   LaO_x Thin Film Deposited by Direct Liquid Injection MOCVD

   Jino Jun, Jin Hyung Jun, and Doo Jin Choi

7. Journal of Solid State Chemistry 171 (2003) 170

   Rare-earth oxide thin films as gate oxides in MOSFET transistors

   Markku Leskelä and Mikko Ritala