Jpn. J. Appl. Phys. 41 (2002) pp. 4217-4221  |Next Article|  |Table of Contents|
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Binary-Solvent Developer for Cross-Linked Positive-Tone Resists

Toru Yamaguchi and Hideo Namatsu

NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

(Received November 1, 2001; accepted for publication February 25, 2002)

A new binary-solvent developer has been developed for a cross-linked positive-tone resist called suppressed aggregate extraction development (SAGEX) resist. It is composed of a good solvent and a poor solvent that does not produce swelling in the resist polymer. Hydrocarbon, such as n-hexane, was used as a poor solvent in this study because alcohol, which is conventionally used as a poor solvent, was not effective. A hydrocarbon, which causes little swelling of the base polymer, reduces the dissolution of lightly exposed SAGEX resist in a good solvent. As a result, with this developer, a high contrast can be obtained and resist residue can be eliminated at the same time. In addition, this developer has been shown to be effective in reducing resist roughness; that is, it helps reduce the line-edge roughness of resist patterns to 1 nm or less.

DOI: 10.1143/JJAP.41.4217
KEYWORDS:line-edge roughness, positive-tone resists, development, electron beam lithography, polymer aggregates

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References | Citing Articles (3)

  1. M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, K. Murase and T. Makino: Microelectron. Eng. 30 (1996) 419.
  2. T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara: Appl. Phys. Lett. 71 (1997) 2388[AIP Scitation].
  3. T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara: Proc. SPIE 3333 (1998) 830[AIP Scitation].
  4. H. Namatsu, Y. Takahashi, K. Yamazaki, T. Yamaguchi, M. Nagase and K. Kurihara: J. Vac. Sci. & Technol. B 16 (1998) 69[AIP Scitation].
  5. G. Reynolds and J. W. Talor: Proc. SPIE 3333 (1998) 916[AIP Scitation].
  6. T. Yoshimura, M. Ezumi, T. Otaka, H. Todokoro, J. Yamamoto and T. Terasawa: Proc. SPIE 3332 (1998) 61[AIP Scitation].
  7. C. M. Nelson, S. C. Palmateer and T. Lyszczarz: Proc. SPIE 3332 (1998) 19[AIP Scitation].
  8. G. W. Reynolds and J. W. Taylor: J. Vac. Sci. & Technol. B 17 (1999) 334[AIP Scitation].
  9. T. Yamaguchi, H. Namatsu, M. Nagase, K. Yamazaki and K. Kurihara: Jpn. J. Appl. Phys. 38 (1999) 7114[JSAP].
  10. H. Namatsu, M. Nagase, T. Yamaguchi, K. Yamazaki and K. Kurihara: J. Vac. Sci. & Technol. B 16 (1998) 3315[AIP Scitation].
  11. K. Nakano, K. Maeda, S. Iwasa, J. Yano. Y. Ogura and E. Hasegawa: Proc. SPIE 2195 (1994) 194[AIP Scitation].
  12. H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, T. Furuta and K. Murase: J. Vac. Sci. Technol. B13 (1995) 1473.
  13. C. M. Hansen: Hansen Solubility Parameters: A User's Handbook (CRC Press, New York, 2000).
  14. T. Nishida, M. Notomi, R. Iga and T. Tamamura: Jpn. J. Appl. Phys. 31 (1992) 4508[JSAP].

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