Jpn. J. Appl. Phys. 41 (2002) pp. 4442-4449  |Next Article|  |Table of Contents|
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Thermal Behavior of Large-Diameter Silicon Wafers during High-Temperature Rapid Thermal Processing in Single Wafer Furnace

Woo Sik Yoo, Takashi Fukada, Ichiro Yokoyama, Kitaek Kang and Nobuaki Takahashi¹

(Received February 28, 2002; accepted for publication April 12, 2002)

Thermal behavior of 200-mm- and 300-mm-diameter Si (100) wafers during high-temperature rapid thermal processing (RTP) in a single wafer furnace (SWF) is investigated as a function of temperature, pressure, process time, wafer handling method and speed. Significant elastic wafer shape deformation was observed during wafer temperature ramp-up. Slip generation was frequently observed in wafers processed above 1050°C. Size, shape and spatial distribution of crystal defects generated during RTP were characterized using an optical microscope and X-ray topography. The wafer handling method and speed are found to be very important in reducing defect generation during RTP at the given process conditions. Highly reproducible, slip-free RTP results were achieved in 200-mm- and 300-mm-diameter Si (100) wafers processed at 1100°C by optimizing the wafer handling method and speed.

URL: http://jjap.jsap.jp/link?JJAP/41/4442/
DOI: 10.1143/JJAP.41.4442

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