Jpn. J. Appl. Phys. 41 (2002) pp. 6313-6319  |Next Article|  |Table of Contents|
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Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors

Satoshi Inoue, Hiroyuki Ohshima¹ and Tatsuya Shimoda

(Received November 6, 2001; accepted for publication August 8, 2002)

The reliability of low-temperature-processed (≦425°C) polycrystalline-silicon thin film transistors (poly-Si TFTs) was investigated. For n-channel TFTs, the sub-threshold characteristics shifted in the positive direction when a high voltage stress was applied to them, which is particularly significant in small-size TFTs as well as in wide-channel TFTs. It was verified that the temperature of the TFTs reached over 300°C due to self-heating when this stress was applied. We estimate that the breaking of Si–H bonds and re-generation of dangling bonds in the channel poly-Si layers due to self-heating are responsible for the degradation phenomenon.

URL: http://jjap.jsap.jp/link?JJAP/41/6313/
DOI: 10.1143/JJAP.41.6313
KEYWORDS:poly-Si TFT (polycrystalline-silicon thin film transistor), reliability, thin films, self-heating, temperature

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