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Jpn. J. Appl. Phys. 41 (2002) pp. L1143-L1145  |Next Article|  |Table of Contents|
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Letter

Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots

Takashi Kita, Osamu Wada, Hiroji Ebe¹, Yoshiaki Nakata¹ and Mitsuru Sugawara¹

Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
¹Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan

(Received July 22, 2002; accepted for publication August 19, 2002)

The linear-polarization character of photoluminescence (PL) from the cleaved edge surface of columnar InAs/GaAs self-assembled quantum dots (QDs) has been investigated. The columnar QDs were fabricated by closely stacking the Stranski-Krastanov-mode InAs-island layers. Anisotropy of the PL polarization depends on the stacking layer number. The single-island-layer sample shows strong transverse-electric (TE)-mode PL. With increasing stacking layer number, the PL-intensity ratio of TE-mode PL to transverse-magnetic (TM)-mode PL decreases. Then, the TE/TM-mode PL-intensity ratio is inverted beyond the stacking layer number of 9. Our results suggest that a polarization-independent transition can be accomplished by controlling the stacking layer number.

URL: http://jjap.jsap.jp/link?JJAP/41/L1143/
DOI: 10.1143/JJAP.41.L1143

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