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Jpn. J. Appl. Phys. 41 (2002) pp. L1164-L1166  |Next Article|  |Table of Contents|
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Letter

Effect of High-Pressure Oxygen Annealing on Bi₂SiO₅-Added Ferroelectric Thin Films

Takeshi Kijima^1,2, Yoshihito Kawashima², Yasushi Idemoto³ and Hiroshi Ishiwara²

¹Research and Development for Future Electron Devices, 1-10-14 Kitaueno, Taito-ku 110-0014, Japan
²Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
³Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan

(Received July 11, 2002; accepted for publication August 23, 2002)

The crystallization temperature of typical ferroelectric films such as PbZr_1-XTi_XO₃ (PZT), SrBi₂Ta₂O₉ (SBT), and (Bi,La)₄Ti₃O₁₂ (BLT) was found to decrease by 150 to 200°C in a chemical solution deposition method by adding Bi₂SiO₅ (BSO) in the sol-gel solutions. It was also found that the ferroelectric and insulating characteristics of the BSO-added films were significantly improved by annealing in high-pressure oxygen up to 9.9 atms. Three-orders-of-magnitude improvement of the leakage current density was observed in BSO-added BLT films after annealing at 9.9 atms, while pronounced increase of the saturation polarization level was observed in BSO-added SBT and PZT films. From cross-sectional transmission electron microscopy (TEM) observations, the origin of the improved characteristics was speculated to be the structural change of the films.

URL: http://jjap.jsap.jp/link?JJAP/41/L1164/
DOI: 10.1143/JJAP.41.L1164

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References | Citing Articles (20)

1. T. Kijima and H. Ishiwara: Jpn. J. Appl. Phys. 41 (2002) L716[JSAP].
2. T. Kijima and H. Matsunaga: Jpn. J. Appl. Phys. 37 (1998) 5171[JSAP].
3. M. Yamaguchi, K. Hiraki, T. Nagatomo and Y. Masuda: Jpn. J. Appl. Phys. 39 (2000) 5512[JSAP].
4. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee and W. Jo: Nature 401 (1999) 682[CrossRef].
5. T. Hirai, Y. Fujisaki, K. Nagashima, H. Koike and Y. Tarui: Jpn. J. Appl. Phys. 36 (1997) 5908[JSAP].
6. K. Kato, C. Zheng, J. M. Finder, S. K. Dey and Y. Torii: J. Am. Ceram. Soc. 81 (1998) 1869.
7. K. Aizawa, E. Tokumitsu, K. Okamoto and H. Ishiwara: Appl. Phys. Lett. 76 (2000) 2609[AIP Scitation].
8. K. Aoki, Y. Fukuda, K. Numata and A. Nishimura: Jpn. J. Appl. Phys. 35 (1996) 2210[JSAP].
9. Y. Shimamoto, K. A. Kushida, H. Miki and Y. Fujisaki: Appl.Phys. Lett. 70 (1997) 1[AIP Scitation].
10. N. Soyama, K. Miki, S. Mori and K. Ogi: Jpn. J. Appl. Phys. 39 (2000) 5434[JSAP].
11. C. H. Lin, P. A. Friddle, X. Lu, H. Chen, Y. Kim and T. B. Wu: J. Appl. Phys. 88 (2000) 2157[AIP Scitation].

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