Jpn. J. Appl. Phys. 41 (2002) pp. L246-L248  |Next Article|  |Table of Contents|
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Letter

Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well

Motokazu Yamada, Yukio Narukawa and Takashi Mukai1

Advanced LED Development Center, NICHIA Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
1Nitride Semiconductor Research Laboratory, NICHIA Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

(Received December 19, 2001; accepted for publication January 16, 2002)

We fabricated two types of high-efficiency white light-emitting diodes (LEDs) composed of an InGaN multi-quantum well (MQW), which emit light of two or three different colors without phosphors. The Type-1 white LED emits light of two colors (blue and yellow) from the MQW active layer, while the Type-2 LED emits light of three colors (blue, green and red). When the Type-1 white LED was operated at a forward current of 20 mA at room temperature, the color temperature (Tcp), average color rendering (Ra) and luminous efficiency were 7600 K, 42.7 and 11.04 lm/W, respectively. When the Type-2 white LED was operated at a forward current of 20 mA at room temperature, Tcp, Ra and luminous efficiency were 5060 K, 80.2 and 7.94 lm/W, respectively.

URL: http://jjap.jsap.jp/link?JJAP/41/L246/
DOI: 10.1143/JJAP.41.L246
KEYWORDS:InGaN, GaN, LEDs, blue, green, yellow, red, white, MQW


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