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Jpn. J. Appl. Phys. 41 (2002) pp. L629-L631  |Next Article|  |Table of Contents|
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Letter

Effect of Forming Gas Anneal on the Properties of (Ba, Sr)RuO3 and (Ba, Sr)TiO3

Young-Bae Kim, Jeong-Hee Park, Duck-Hwa Hong and Duck-Kyun Choi

Department of Ceramic Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-ku, Seoul 133-791, Korea

(Received March 14, 2002; accepted for publication April 13, 2002)

The effects of forming gas anneal on (Ba, Sr)RuO3 and (Ba, Sr)TiO3 films are investigated. Three kinds of samples such as BSR/Si, SiO2/BSR/Si, and SiO2/BSR/BST/BSR/Si were prepared by RF magnetron sputtering technique and forming gas (10% H2+90% N2) anneal was carried out at 400°C for 30 min. The samples having a SiO2 capping layer were employed to examine the effects of forming gas anneal (FGA) on the films under the similar condition to the standard complementary metal oxide semiconductor (CMOS) process. In contrast to the BSR film directly exposed to H2 ambient, the SiO2 capped BSR film was not damaged during H2 annealing. The SiO2 capping turned out to be also effective in preserving the properties of BSR film in BSR/BST/BSR capacitor structure, and the BSR electrode with the use of SiO2 capping layer made it possible to keep the electrical properties of BST films in the capacitor structure within the practical level.

URL: http://jjap.jsap.jp/link?JJAP/41/L629/
DOI: 10.1143/JJAP.41.L629
KEYWORDS:(Ba, Sr)RuO3, (Ba, Sr)TiO3, forming gas anneal, degradation, SiO2 capping


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References | Citing Article (1)

  1. S. K. Hong, C. S. Whang, O. S. Kwon and N. S. Kang: Appl. Phys. Lett. 76 (2000) 324[AIP Scitation].
  2. J. D. Baniecki, R. B. Laibowitz, T. M. Shaw, K. L. Saenger, P. R. Dun-combe, C. Cabral, D. E. Kotecki, H. Shen, J. Lian and Q. Y. Ma: J. Eur. Ceram. Soc. 19 (1999) 1457.
  3. D. Hadad, T.-S. Chen, V. Balu, B. Jiang, S. Hong, S. H. Kuah, P. McIntyre, S. Summerfelt, J. M. Anthony and J. C. Lee: Integr. Ferroelectr. 17 (1997) 461.
  4. J. P. Han and T. P. Ma: Appl. Phys. Lett. 71 (1997) 1267[AIP Scitation].
  5. Y. Fujisaki, K. Kushida-Abdelghafar, Y. Shimamoto and H. Miki: J. Appl. Phys. 82 (1997) 341[AIP Scitation].
  6. Y. Shimamoto, K. Kushida-Abdelghafar, H. Miki and Y. Fusjisaki: Appl. Phys. Lett. 70 (1997) 3096[AIP Scitation].
  7. S. K. Hong, H. J. Bak, I. S. An and O. K. Kim: Jpn. J. Appl. Phys. 39 (2000) 1796[JSAP].
  8. M. Hiratani, Y. Matsui, K. Imagawa and S. Kimura: Jpn. J. Appl. Phys. 38 (1999) L1275[JSAP].
  9. J. Lin, K. Natori, Y. Fukuzumi, M. Izuha, K. Tsunoda, K. Eguchi, K. Hieda and D. Matsunaga: Appl. Phys. Lett. 76 (2000) 2430[AIP Scitation].
  10. S. Aggarwal, S. R. Perusse, B. Nagaraj and R. Ramesh: Appl. Phys. Lett. 74 (1999) 3023[AIP Scitation].
  11. D. K. Choi, B. S. Kim, S. Y. Son, S. H. Oh and K. W. Park: J. Appl. Phys. 86 (1999) 3347[AIP Scitation].
  12. R. Liedtke, M. Grossmann and R. Waser: Appl. Phys. Lett. 77 (2000) 2045[AIP Scitation].
  13. D. S. Kil, J. B. Park, D. S. Yoon, C. R. Song, H. J. Cho, Y. S. Kim, Y. S. Yu, J. S. Roh and H. K. Yoon: Jpn. J. Appl. Phys. 40 (2001) 3260[JSAP].
  14. J. H. Ahn, P. C. Mclntyre and L. W. Mirkarimi, et al.: Appl. Phys. Lett. 77 (2000) 1378[AIP Scitation].
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