Jpn. J. Appl. Phys. 42 (2003) pp. 1139-1144  |Next Article|  |Table of Contents|
|Full Text PDF (134K)| |Buy This Article|

Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source

Tomohiro Ichino, Hideo Uchida, Masaya Ichimura and Eisuke Arai

(Received June 6, 2002; accepted for publication October 30, 2002)

The Sb pile-up phenomenon during drive-in diffusion at 1000°C in N₂, dry O₂ and wet O₂ atmospheres after predeposition was investigated. The Sb surface concentration during the predeposition using doped oxide source was about 7×10¹⁸ cm^-3 which is lower than the solid solubility. From the measured Sb depth profiles in both Si and oxide, it was found that the Sb pile-up layer is located at the oxide side of the oxide/Si interface, the Sb peak concentration of the layer is of the order of 10¹⁹ cm^-3 irrespective of diffusion atmospheres, and the layer is not a single monolayer but above 4 nm in width. The Sb amount taken into oxide during drive-in diffusion increases with the increase in oxide thickness and Sb surface concentration in Si. For drive-in diffusion in N₂ ambient, the Sb pile-up amount in oxide is nearly saturated within the initial 10 min, while for the diffusion in dry O₂ ambient, this occurs within 30 min.

URL: http://jjap.jsap.jp/link?JJAP/42/1139/
DOI: 10.1143/JJAP.42.1139

References

1. K. Shibahara, M. Mifuji, T. Kugimiya, H. Tsuno, S. Yokoyama, M. Nagata, S. Miyazaki and M. Hirose: Tech. Dig. IEDM, 1996, p. 579.
2. K. Shibahara, K. Egusa, K. Kamesaki and H. Furumoto: Jpn. J. Appl. Phys. 39 (2000) 2194[JSAP].
3. G. A. Sai-Halasz, K. T. Short and J. S. Williams: IEEE Electron Device Lett. 6 (1985) 287.
4. K. Shibahara, H. Furumoto, K. Egusa, M. Koh and S. Yokoyama: Mater. Res. Soc. Symp. Proc. 532 (1998) 23.
5. A. S. Grove, O. Leistiko and C. T. Sah: J. Appl. Phys. 35 (1964) 2695[AIP Scitation].
6. S. Mizuo and H. Higuchi: J. Electrochem. Soc. 130 (1983) 1942.
7. F. A. Trumbore: Bell Syst. Tech. J. 39 (1960) 205.
8. F. Lau, L. Mader, C. Mazure and C. Werner: Appl. Phys. 49 (1989) 671.
9. Y.-S. Oh and D. E. Ward: Tech. Dig. IEDM, 1998, p. 509.
10. M. Yoshida: Jpn. J. Appl. Phys. 10 (1971) 702[JSAP].
11. TMA: TSUPREM-4 Users Manual.