Jpn. J. Appl. Phys. 42 (2003) pp. 1660-1664 |Next Article| |Table of Contents|
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Chemical Solution Processing and Properties of (Bi,Nd)4Ti3O12 Ferroelectric Thin Films
Takashi Hayashi,
Naoya Iizawa,
Daichi Togawa,
Mio Yamada1,
Wataru Sakamoto2 and
Shin-ichi Hirano1
Department of Materials Science and Engineering, Shonan Institute of Technology, 1-1-25 Tsujido-Nishikaigan, Fujisawa, Kanagawa 251-8511, Japan
1Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
2Center for Integrated Research in Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
(Received September 27, 2002; accepted for publication December 2, 2002)
Low-temperature processing of (Bi,Nd)4Ti3O12 (BNT) thin films was investigated by a chemical solution deposition method, and their ferroelectric properties, crystallinity and microstructure were characterized. BNT thin films were prepared on Pt/TiOx/SiO2/Si substrates by a spin-coating technique using metal-organic precursor solutions. The BNT precursor films crystallized into the Bi4Ti3O12 (BIT) structure above 600°C. The synthesized BNT films exhibited high crystallinity with low (00l) preferred orientation. BNT thin films prepared at 600°C showed a homogeneous and dense microstructure with a grain size of 50–100 nm. They also showed a well-saturated P–E hysteresis curve with a Pr of 7.0 µC/cm2 and Ec of 83 kV/cm. The Nd-substitution for the Bi site in the BIT structure was found to be effective for promoting the (117) preferred orientation and for improving the ferroelectric properties of the resultant films.
URL:
http://jjap.jsap.jp/link?JJAP/42/1660/
DOI: 10.1143/JJAP.42.1660
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