Jpn. J. Appl. Phys. 42 (2003) pp. 2639-2648 |Next Article| |Table of Contents|
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Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
Minoru Sugawara,
Akira Chiba and
Iwao Nishiyama
Association of Super-Advanced Electronics Technologies (ASET) EUVL Laboratory, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
(Received September 3, 2002; revised manuscript revised November 15, 2002; accepted for publication November 22, 2002)
An attenuated phase-shift mask (att-PSM) and an alternating phase-shift mask (alt-PSM) were designed for extreme ultraviolet lithography (EUVL). For an att-PSM, a bilayer structure is newly designed. The bilayer structure provides appropriate attenuated reflectance by choosing thicknesses and ensures sufficient thickness latitude. For the alt-PSM, the additive structure is newly introduced. The new additive structure generates 180 degrees of phase shift and uniform reflectance simultaneously. The new alt-PSM is constituted of materials of TaN, Ru, Si and Mo that have been already made available in a binary mask. An appropriate combination of materials in the additive structure also gives a flat surface structure. The new PSMs enable the fabrication of smaller gates with lengths of 18 nm or below.
URL:
http://jjap.jsap.jp/link?JJAP/42/2639/
DOI: 10.1143/JJAP.42.2639
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