Jpn. J. Appl. Phys. 42 (2003) pp. 2756-2758  |Next Article|  |Table of Contents|
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Low-Pressure Crystallization of Sol–Gel-Derived PbZr_0.52Ti_0.48O₃ Thin Films at Low Temperature for Low-Voltage Operation

Ding-Yeong Wang, Chao-Hsin Chien¹, Chun-Yen Chang, Ching-Chich Leu¹, Jung-Yen Yang¹, Shiow-Huey Chuang¹ and Tiao-Yuan Huang

(Received September 5, 2002; accepted for publication December 18, 2002)

The properties of sol–gel-derived 120-nm PbZr_0.52Ti_0.48O₃ thin films crystallized in low-pressure O₂ ambient at 500°C have been investigated. It is found that PbZr_0.52Ti_0.48O₃ films crystallized in low-pressure oxygen ambient exhibit higher remanent polarization as well as a lower coercive field, compared to those annealed in O₂ atmosphere. The remanent polarization (i.e., 2P_r) for samples annealed in 60 mbar O₂ ambient is as high as 36 µC/cm², and the coercive field (2E_C) is 99.9 kV/cm at an applied voltage of 2 V. The improvement of P–E hysteresis loops by low-pressure oxygen annealing is ascribed to less incorporation of oxygen and other residues in the resultant PbZr_0.52Ti_0.48O₃ films, since the reductions in the amount of these residual species are beneficial for the complete transformation of the perovskite structure. The reductions in oxygen content and amounts of other residues such as CO₂ and H₂O are confirmed based on Auger depth profiles and thermal desorption spectra (TDS), respectively.

URL: http://jjap.jsap.jp/link?JJAP/42/2756/
DOI: 10.1143/JJAP.42.2756

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