Jpn. J. Appl. Phys. 42 (2003) pp. 2876-2880 |Next Article| |Table of Contents|
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X-Ray Stress Measurement Method for Single Crystal with Unknown Stress-Free Lattice Parameter
1Department of Mechanical Engineering, Graduate Student of Engineering, Tokyo Metropolitan University, 1-1 Minami-Ohsawa, Hachioji, Tokyo 192-0397, Japan
2Department of Mechanical Systems Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya, Tokyo 158-8557, Japan
3Department of Mechanical Engineering, Graduate School of Engineering, Tokyo Metropolitan University, 1-1 Minami-Ohsawa, Hachioji, Tokyo 192-0397, Japan
(Received August 1, 2002; accepted for publication December 11, 2002)
In this study, a new principle, which can determine the stress states in a single crystal even if the lattice spacing of d0 in the stress-free condition is unknown, was proposed. In this principle, the stress states in the plane stress condition can be determined by considering not only the stress components but also the stress-free diffraction angle of 2θ0 as constant values in multiple regression analysis. The stress states calculated by this principle is not affected by the slight change of the predicted diffraction angle 2θ0 which occurs due to the setting error of the specimen. Therefore, this principle can determine the plane stress condition without the effect of the reliability of d0. High reliability of this principle was verified by carrying out the applied stress measurements of silicon single crystal.
KEYWORDS:X-ray stress measurement, single crystal, lattice parameter, residual stress, silicon
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