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Jpn. J. Appl. Phys. 42 (2003) pp. 3316-3319  |Next Article|  |Table of Contents|
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AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer

Shoou-Jinn Chang, Sun-Chin Wei, Yan-Kuin Su, Chun-Hsing Liu1, Shih-Chih Chen2, Uang-Heay Liaw3, Tzong-Yow Tsai and Tzu-Hsuan Hsu

Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
1Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui 737, Taiwan
2Institute of Electronics and Information Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin 640, Taiwan
3Department of Electronic Engineering, Chin-Min College, To-Fen 351, Taiwan

(Received September 17, 2002; revised manuscript revised December 24, 2002; accepted for publication December 27, 2002)

AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with and without the Mg-doped semi-insulating carrier confinement layer were prepared and a detailed study on the electrical properties of these samples was performed. The addition of the Mg-doped semi-insulating carrier confinement layer resulted in the degradation of crystal quality. Thus, higher values of gm, IDS and the gate voltage swing are achieved by conventional MODFETs. The source-to-drain (S–D) leakage current of conventional MODFETs was also higher, since carriers could flow through the thick unintentionally doped GaN layer. However, the S–D leakage current was reduced from 50 mA/mm to 6 mA/mm with the insertion of the Mg-doped semi-insulating carrier confinement layer.

URL: http://jjap.jsap.jp/link?JJAP/42/3316/
DOI: 10.1143/JJAP.42.3316


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