Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 42 (2003) pp. 393-399  |Next Article|  |Table of Contents|
|Full Text PDF (158K)| |Buy This Article|

Excitonic Properties in CdxZn1-xS/ZnS Quantum Wells

Chikara Onodera2, Tadayoshi Shoji3, Yukio Hiratate3 and Tsunemasa Taguchi1

1Department of Electrical and Electronic Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
2Electronic Engineering Course, Aomori Prefectural Hachinohe Technical Senior High School, 1-2-27 Koyo, Hachinohe, Aomori 031-0801, Japan
3Department of Electronics, Tohoku Institute of Technology, 35-1 Yagiyama Kasumi-cho Taihaku-ku, Sendai 982-8577, Japan

(Received September 25, 2001; revised manuscript revised June 5, 2002; accepted for publication September 25, 2002)

We have performed a theoretical study of the exciton properties in the CdxZn1-xS/ZnS quantum wells (QWs) with taking into account the strain effect due to a ZnS buffer layer. The variation of the exciton binding energy that is caused by the strain effect due to the ZnS buffer layer is very small. The variation of the effective band gap energy is larger than that of the exciton binding energy under the strain due to the ZnS buffer layer. The effect of the electric field on the exciton binding energy is calculated using a variational approach. The exciton binding energy decreases with increasing the electric field, and decreases significantly at the wide well widths due to the spatial separation between the electron and the hole. The diamagnetic shift of the exciton is calculated under the magnetic field, and is less than 0.11 meV.

URL: http://jjap.jsap.jp/link?JJAP/42/393/
DOI: 10.1143/JJAP.42.393
KEYWORDS:CdxZn1-xS/ZnS QW, band offset, exciton, exciton binding energy, electric field, magnetic field


|Full Text PDF (158K)| |Buy This Article| Citation:

References | Citing Articles (11)

  1. K. Ohkawa, T. Karasawa and T. Mitsuyu: J. Cryst. Growth 111 (1991) 797[CrossRef].
  2. Y. Kawakami, T. Taguchi and A. Hiraki: J. Cryst. Growth 89 (1988) 331[CrossRef].
  3. I. Suemune, K. Yamada, H. Masato, Y. Kan and M. Yamanishi: Appl. Phys. Lett. 54 (1989) 981[AIP Scitation].
  4. M. A. Hasse, J. Qiu, J. M. DePuydt and H. Cheng: Appl. Phys. Lett. 59 (1991) 1272[AIP Scitation].
  5. Y. Yamada, T. Mishina, Y. Masumoto, Y. Kawakami, S. Yamaguchi, K. Ichino, Sz. Fujita and Sg. Fujita: Phys. Rev. B 51 (1995) 2596[APS].
  6. H. Okuyama, N. Nakayama, S. Itoh, M. Ikeda and A. Ishibashi: Jpn. J. Appl. Phys. 35 (1996) 1410[JSAP].
  7. N. Nakayama, S. Itoh, T. Ohta, K. Nakano, H. Okuyama, M. Ozawa, A. Ishibashi, M. Ikeda and Y. Mori: Electron. Lett. 29 (1993) 1488[AIP Scitation].
  8. Y. Kishita, H. Okuyama and K. Akimoto: Jpn. J. Appl. Phys. 32 (1993) 678[JSAP].
  9. T. Taguchi and Y. Endoh: Jpn. J. Appl. Phys. 30 (1991) L952[JSAP].
  10. Y. Yamada, Y. Masumoto, J. T. Mullins and T. Taguchi: Appl. Phys. Lett. 61 (1992) 2190[AIP Scitation].
  11. Y. Yamada, Y. Masumoto and T. Taguchi: Physica B 191 (1993) 83[CrossRef].
  12. T. Taguchi, C. Onodera, Y. Yamada and Y. Masumoto: Jpn. J. Appl. Phys. 32 (1993) L1308[JSAP].
  13. S. Nakamura, T. Sakashita, K. Yoshimura, Y. Yamada and T. Taguchi: J. Cryst. Growth 184/185 (1998) 1110.
  14. S. Nakamura, T. Sakashita, K. Yoshimura, Y. Yamada and T. Taguchi: Jpn. J. Appl. Phys. 36 (1997) L491[JSAP].
  15. Y. Kawakami: Oyo Buturi 65 (1996) 13 [in Japanese].
  16. C. Onodera and T. Taguchi: Trans. IEE Jpn. 114-C (1994) 1280 [in Japanese].
  17. Y. Wu, K. Ichino, Y. Kawakami, S. Fujita and S. Fujita: Jpn. J. Appl. Phys. 31 (1992) 1737[JSAP].
  18. H. Mathieu, J. Allegre, A. Chatt, P. Lefebvre and J. P. Faurie: Phys. Rev. B 38 (1988) 7740[APS].
  19. K. Shahzad, D. Olego and C. G. Van de Walle: Phys. Rev. B 38 (1988) 1417[APS].
  20. F. H. Pollak and M. Cardona: Phys. Rev. 172 (1968) 816[APS].
  21. R. L. Greene, K. K. Bajaj and D. E. Phelps: Phys. Rev. B 29 (1984) 1807[APS].
  22. C. Priester, G. Allan and M. Lannoo: Phys. Rev. B 30 (1984) 7302[APS].
  23. G. Basterd, E. E. Mendez, L. L. Chang and L. Esaki: Phys. Rev. B 26 (1982) 1974[APS].
  24. G. E. W. Bauer and T. Ando: Phys. Rev. B 38 (1988) 6015[APS].
  25. Y. Shinozuka and M. Matsuura: Phys. Rev. B 28 (1983) 4878 [APS][ Errata; 29 (1984) 3717[APS]].
  26. J. A. Brum and G. Basterd: Phys. Rev. B 31 (1985) 3893[APS].
  27. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus: Phys. Rev. B 32 (1985) 1043[APS].
  28. S. Tarucha and H. Okamoto, Y. Iwasa and N. Miura: Solid State Commun. 52 (1984) 815[CrossRef].
  29. Semiconductors-Basic Data, ed. O. Madelung (Springer, 1996) p. 182.
  30. R. Hill: J. Phys. C 7 (1974) 521[IoP STACKS].
  31. W. Imajuku, M. Takahashi, M. Kobayashi and A. Yoshikawa: Jpn. J. Appl. Phys. 34 (1995) 1861[JSAP].
  32. D. A. Berlincourt, H. Jaffe and L. R. Shiozawa: Phys. Rev. 129 (1963) 1009[APS].
  33. C. A. Arguello, D. L. Rousseau and S. P. S. Porto: Phys. Rev. 181 (1969) 1351[APS].
  34. R. Zheng and M. Matsuura: Phys. Rev. B 58 (1998) 10769[APS].
  35. L. Goldstein, Y. Horikoshi, S. Tarucha and H. Okamoto: Jpn. J. Appl. Phys. 22 (1983) 1489[JSAP].
  36. M. Tanaka, H. Sasaki and J. Yoshino: Jpn. J. Appl. Phys. 25 (1986) L155[JSAP].
  37. J. Singh, K. K. Bajaj and S. Chaudhuri: Appl. Phys. Lett. 44 (1984) 805[AIP Scitation].
  38. J. D. Dow and D. Redfield: Phys. Rev. B 1 (1970) 3358[APS].
  39. T. Taguchi, Y. Yamada and Y. Endoh: Trans. IEE Jpn. 110-C (1990) 741 [in Japanese].
  40. Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, Y. Yamada and Y. Masumoto: Phys. Rev. B 50 (1994) 14655[APS].
  41. K. Yoshimura, H. Watanabe, Y. Yamada, T. Taguchi, F. Sasaki, S. Kobayashi and T. Tani: J. Cryst. Growth 184/185 (1998) 682.
  42. Y. Yamada: Oyo Buturi 70 (2001) 317 [in Japanese].
  43. N. Miura: Ryosi Koka to Jiba (Quantum Effects and Magnetic Fields), ed. T. Ando (Maruzen, Tokyo, 1995) Chap. 5, p. 237 [in Japanese].
|TOP|  |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information