Jpn. J. Appl. Phys. 42 (2003) pp. 5563-5564 |Next Article| |Table of Contents|
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Short Note
High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
Ta-Ming Kuan,
Shoou-Jinn Chang,
Yan-Kuin Su,
Chih-Hsin Ko,
James B. Webb1,
Jennifer A. Bardwell1,
Ying Liu1,
Haipeng Tang1,
Web-Jen Lin2,
Ya-Tung Cherng2 and
Wen-How Lan3
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
1Institute for Microstructural Sciences, National Research Council, Montreal Rd., Ottawa K1A 0R6, Canada
2Materials R&D Center, Chung Shan Institute of Science & Technology, Taoyuan, Taiwan 325, R.O.C.
3Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, Taiwan 811, R.O.C.
(Received February 12, 2003; revised manuscript revised April 3, 2003; accepted for publication April 28, 2003)
Nitride-based AlGaN/GaN heterostructure two dimensional electron gas (2DEG) photodetectors have been successfully fabricated. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve an extremely high photodetector responsiveness. At an incident light wavelength of 240 nm, it was found that the responsiveness could reach 5.2×109 A/W.
URL:
http://jjap.jsap.jp/link?JJAP/42/5563/
DOI: 10.1143/JJAP.42.5563
KEYWORDS:GaN, MOVPE, 2DEG, photodetector
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