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Jpn. J. Appl. Phys. 42 (2003) pp. 5598-5601  |Next Article|  |Table of Contents|
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GaNAs as Strain Compensating Layer for 1.55 µm Light Emission from InAs Quantum Dots

Sasikala Ganapathy1,2, Xi Qing Zhang1, Ikuo Suemune1,2, Katsuhiro Uesugi1, Hidekazu Kumano1, B. J. Kim3 and Tae-Yeon Seong3

1Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Sapporo 060-0812, Japan
2CREST, Japan Science and Technology Corporation, 4-1-8, Honcho, Kawaguchi,332-0012 Japan
3Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea

(Received March 4, 2003; accepted for publication March 28, 2003)

GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 µm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.

URL: http://jjap.jsap.jp/link?JJAP/42/5598/
DOI: 10.1143/JJAP.42.5598


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