Jpn. J. Appl. Phys. 42 (2003) pp. 5687-5691  |Next Article|  |Table of Contents|
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Effect of Thermal Treatment of Undoped Bi₄Ti₃O₁₂ Thin Films Prepared by Metalorganic Chemical Vapor Deposition

Makoto Nakamura, Tohru Higuchi and Takeyo Tsukamoto

(Received January 23, 2003; accepted for publication May 14, 2003)

We have prepared undoped-Bi₄Ti₃O₁₂ (BIT) thin films on (111) Pt/Ti/SiO₂/Si substrates by metalorganic chemical vapor deposition (MOCVD) using Bi(CH₃)₃ and Ti(i-OC₃H₇)₄ sources. The structural properties of the BIT thin films deposited at 500°C depend on the total gas flow rate of Ar and O₂ gases during the deposition. The electrical and structural properties of the as-deposited BIT thin films are improved by postannealing at 800°C in O₂ atmosphere. When the total gas flow rate was 90 sccm, the post-annealed BIT thin films exhibited a (117)-preferred orientation and a good P–E histeresis loop. Their remanent polarization (P_r) and the coercive field (E_c) were 2P_r=28.8 µC/cm² and 2E_c=130.7 kV/cm, respectively.

URL: http://jjap.jsap.jp/link?JJAP/42/5687/
DOI: 10.1143/JJAP.42.5687

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