Jpn. J. Appl. Phys. 42 (2003) pp. 6405-6408  |Next Article|  |Table of Contents|
|Full Text PDF (100K)| |Buy This Article|

Conductance Frequency Spectroscopy Study of a Low Resistive p-Type GaN Layer Highly Doped with Mg

Yasuhito Zohta, Tomotsugu Mitani¹ and Takashi Mukai¹

(Received April 21, 2003; accepted July 4, 2003; published October 9, 2003)

A low resistive p-type GaN layer highly doped with Mg (10²⁰ cm^-3) was studied by conductance frequency spectroscopy. Three peaks were found in the G/f–f curve of the reversed-biased Mg doped p–n junction at temperatures ranging from 300 K to 77 K. The activation energies associated with two peaks are 63 meV and 90 meV, respectively around room temperatures, and decrease with decreasing temperatures. The activation energy of one more peak appearing at low temperatures is 16 meV, the value of which is very shallow compared to the reported value. Analysis using a multi-deep level model is given, and the experimental results are well explained by this analysis. These results suggest that the Mg acceptor in GaN has not a simple hydrogen-like structure, but a complex multi-level structure.

URL: http://jjap.jsap.jp/link?JJAP/42/6405/
DOI: 10.1143/JJAP.42.6405

References

1. S. Nakamura, S. Pearton and G. Fasol: The Blue Laser Diode (Springer, Berlin, 2000).
2. H. Amano, M. Kito, M. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112[JSAP].
3. S. Nakamura, T. Mukai, M. Senoh and N. Iwasa: Jpn. J. Appl. Phys. 31 (1992) L139[JSAP].
4. S. Nakamura, N. Iwasa, M. Senoh and T. Mukai: Jpn. J. Appl. Phys. 31 (1992) 1258[JSAP].
5. Y. Zohta, H. Kuroda, R. Nii and S. Nakamura: J. Cryst. Growth 189/190 (1998) 816.
6. E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanches and M. Razeghi: Appl. Phys. Lett. 74 (1999) 1171[AIP Scitation].
7. E. Monroy, F. Calle, J. L. Pan, F. J. Sanches, E. Munoz, F. Omnes, B. Beaumont and P. Gibart: J. Appl. Phys. 88 (2000) 2081[AIP Scitation].
8. P. Kozodoy, S. P. DenBaars and U. K. Mishra: J. Appl. Phys. 87 (2000) 770[AIP Scitation].
9. N. D. Nguyen, M. Germain, M. Schmeits, B. Schineiller and M. Heuken: J. Appl. Phys. 90 (2001) 985[AIP Scitation].
10. T. Yamamoto and H. Katayama-Yoshida: Jpn. J. Appl. Phys. 36 (1997) L180[JSAP].
11. I. Akasaki, H. Amano, M. Kito and K. Hiramatsu: J. Lumin. 48/49 (1991) 666.
12. W. Götz, N. M. Johnson, D. P. Bour, C. Chen, C. Kuro, H. Liu and W. Imler: Electrochem. Soc. Proc. 96 (1996) 87.
13. H. Nakayama, P. Hacke, M. R. H. Khan, T. Detchprohm, T. D. Kazumasa, K. Hiramatsu and N. Sawaki: Jpn. J. Appl. Phys. 35 (1996) L282[JSAP].
14. J. W. Huang, T. F. Kuech, Honggiang Lu and I. Bhat: Appl. Phys. Lett. 68 (1996) 2392[AIP Scitation].
15. Y. Zohta, Y. Iwasaki, S. Nakamura and T. Mukai: Jpn. J. Appl. Phys. 40 (2001) L423[JSAP].
16. Here, we use this terminology as a method to plot the variation of the conductance over frequency with frequency, while the admittance spectroscopy as a method to plot the variation of the conductance with temperature.
17. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) 1620[JSAP].
18. S. Nakamura, M. Senoh, N, Iwasa, S. Nagashima, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332[JSAP].
19. Y. Zohta: Solid-State Electron. 16 (1973) 1029.
20. On page 1030, right column, seventh line from the bottom of ref. [rf19], τ=1/e_n should read τ=1/2e_n.
21. J. J. Shiau and R. H. Bube: Solid-State Electron. 29 (1986) 1153.
22. E. G. Schibli: Solid-State Electron. 15 (1972) 137.