Jpn. J. Appl. Phys. 42 (2003) pp. 7205-7208  |Next Article|  |Table of Contents|
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Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al₂O₃ Films using ¹⁸O Isotope

Toshihide Nabatame, Tetsuji Yasuda¹, Masayasu Nishizawa¹, Minoru Ikeda, Tsuyoshi Horikawa¹ and Akira Toriumi^1,2

(Received May 26, 2003; accepted August 1, 2003; published December 10, 2003)

We systematically investigated the oxygen diffusion in both amorphous and γ-Al₂O₃ films using ¹⁸O as a tracer and observing depth profiles by secondary ion mass spectroscopy. The oxygen diffusion coefficients for amorphous Al₂O₃ films were two or three orders of magnitude larger than those of the γ-Al₂O₃ films. The activation energies of about 1.2 eV for both films were considerably lower than those for bulk α-Al₂O₃. These results could be explained by the difference in Al₂O₃ structure: α-Al₂O₃ has a dense corundum structure while γ-Al₂O₃ has a defective spinel structure with cation site vacancies. We found that the amorphous Al₂O₃ films prepared by atomic layer deposition could function as a barrier layer against oxygen diffusion only within a limited range of heat treatment conditions.

URL: http://jjap.jsap.jp/link?JJAP/42/7205/
DOI: 10.1143/JJAP.42.7205

References | Citing Articles (14)

1. G. D. Wilk, R. M. Wallence and J. M. Anthony: J. Appl. Phys. 87 (2000) 484[AIP Scitation].
2. C. H. Lee, H. F. Luan, W. P. Bai, S. J. Lee, T. S. Jeon, Y. Sezaki, D. Roberts and D. L Kwong: Tech. Dig. Int. Electron Devices Meet., 2000, p. 10.
3. E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug and M. A. Gribelyuk: Appl. Phys. Lett. 76 (2000) 176[AIP Scitation].
4. B. W. Busch, W. H. Schulte, E. Garfunkel, T. Gustafsson, W. Qui, R. Nieh and J. Lee: Phys. Rev. B 62 (2000) R13290[APS].
5. T. Nabatame, T. Yasuda, M. Nishizawa, M. Ikeda, T. Horikawa and A. Toriumi: Ext. Abstr. the 2002 Int. Conf. on Solid State Devices & Materials, Nagoya, 2002, p. 64.
6. D. Prot and C. Monty: Phil. Mag. A 73 (1996) 899.
7. Y. Oishi and W. D. Kingery: J. Chem. Phys. 33 (1960) 480[AIP Scitation].
8. K. P. D. Lagerlof, B. J. Pletka, T. E. Mitchell and A. H. Heuer: Rad. Effects 74 (1996) 87.
9. D. Prot, M. L. Gall, B. Lesage, A. M. Huntz and C. Monty: Phil. Mag. A 73 (1996) 935.
10. M. L. Gall, B. Lesage and J. Bernardini: Phil. Mag. A 70 (1994) 761.
11. K. Kimoto, Y. Matsui, T. Nabatame, T. Yasuda, T. Mizoguchi, I. Tanaka and A. Toriumi: submitted to Appl. Phys. Lett.
12. M. Copel, E. Cartier, E. P. Gusev, S. Guha, N. Bojarczuk and M. Poppeller: Appl. Phys. Lett. 78 (2001) 2670[AIP Scitation].
13. E. B. O. da Rosa, I. J. R. Baumvol, J. Morais, R. M. C. De Almeida, R. M. Papaleo and F. C. Stedile: Phys. Rev. B 65 (2002) R121303[APS].
14. J. Crank: The Mathematics of Diffusion (Oxford Univ. Press, 1975) 2nd ed. p. 28.
15. A. Atkinson and R. I. Taylor: Phil. Mag. A 39 (1979) 581.
16. JCPDS 46-1212.
17. JCPDS 50-0741.
18. U. Brossmann, R. Wurschum, U. Sodervall and H. E. Schaefer: J. Appl. Phys. 85 (1999) 7646[AIP Scitation].
19. Y. Oishi, K. Ando and Y. Kubota: J. Chem. Phys. 73 (1980) 1410[AIP Scitation].
20. S. D. Mo, Y. N. Xu and W. Y. Ching: J. Am. Ceram. Soc. 80 (1997) 1193.