Jpn. J. Appl. Phys. 42 (2003) pp. 7221-7226 |Next Article| |Table of Contents|
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InP Hot Electron Transistors with a Buried Metal Gate
Yasuyuki Miyamoto1,2,
Ren Yamamoto1,
Hiroshi Maeda1,
Katsuhiko Takeuchi1,
Nobuya Machida1,
Lars-Erik Wernersson3 and
Kazuhito Furuya1,2
1Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
2CREST, Japan Science and Technology Corporation, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
3Solid State Physics/Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
(Received May 29, 2003; accepted August 11, 2003; published December 10, 2003)
To apply the ballistic nature of hot electrons, an InP hot electron transistor with a buried metal (BM-HET) is reported. In this device, carriers are extracted from the emitter by an attractive potential originating from an embedded metal grating, and they propagate through intrinsic semiconductor material only. A simple estimation shows a high cutoff frequency and low output conductance. The estimated highest cutoff frequency is approximately 1 THz. Fabricated devices show that the collector current increased with the gate bias. After extraction of the leakage current, a clear saturation of the collector current in common-emitter characteristics was confirmed and the possibility of BM-HET as a candidate for high-speed electron devices was demonstrated.
URL:
http://jjap.jsap.jp/link?JJAP/42/7221/
DOI: 10.1143/JJAP.42.7221
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