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Jpn. J. Appl. Phys. 42 (2003) pp. 7276-7283  |Next Article|  |Table of Contents|
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Influence of Internal Electric Field on the Recombination Dynamics of Localized Excitons in an InGaN Double-Quantum-Well Laser Diode Wafer Operated at 450 nm

Takeyoshi Onuma1, Shigefusa F. Chichibu1,2, Toyomi Aoyama3, Kiyomi Nakajima4, Parhat Ahmet4, Takashi Azuhata5, Toyohiro Chikyow3,4, Takayuki Sota6, Shin-ichi Nagahama7 and Takashi Mukai7

1Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
2Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research), Aoba, Sendai 980-0845, Japan
3Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
4National Institute for Material Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan
5Department of Materials Science and Technology, Hirosaki University, Hirosaki 036-8561, Japan
6Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan
7Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan 774-8601, Japan

(Received May 1, 2003; accepted August 25, 2003; published December 10, 2003)

Optical and structural properties of an InGaN double-quantum-well (DQW) laser diode (LD) wafer that lased at 450 nm were investigated to discuss an enormous impact of a polarization-induced electric field on the recombination dynamics in InGaN quantum structures. The quantum-well (QW) structure was shown to have the well thickness as thin as approximately 1 nm and InN molar fraction x of approximately 14%. The gross effective electric field in the QW (FQW) was estimated to be 490 kV/cm from the Franz–Keldysh oscillation (FKO) period in the electroreflectance (ER) spectrum, implying that an internal piezoelectric field (Fpiz) of approximately 1.4 MV/cm was cancelled by the pn junction built-in field (Fbi) and Coulomb screening due to carriers in the DQW. The magnitude of FQW can be further weakened by applying reverse bias (VR) on the junction; the decrease in the photoluminescence (PL) lifetime at low temperature measured under VR was explained to be due to a recovery of electron-hole wavefunction overlap for small VR (|VR|<4 V), and due mainly to the tunneling escape of carriers through the barriers for larger VR. By applying an appropriate VR smaller than 4 V, electron-hole wavefunction overlap, which had been separated vertically along the c-axis due to quantum-confined Stark effect, could be partially recovered, and then the time-resolved PL signals exhibited a less-pronounced stretched exponential decay, giving a scaling parameter (β) of 0.85 and effective in-plane localization depth (E0) of 40–50 meV for the spontaneous emission. These values were closer to those of much homogeneous QWs compared to those reported previously for InGaN QWs having similar InN molar fractions. The use of very thin QWs is considered to bring easier Coulomb screening of FQW and population inversion under high excitation conditions.

URL: http://jjap.jsap.jp/link?JJAP/42/7276/
DOI: 10.1143/JJAP.42.7276
KEYWORDS:InGaN, LD, Franz–Keldysh oscillation, piezoelectric field, quantum-confined Stark effect, recombination dynamics, exciton localization


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