Jpn. J. Appl. Phys. 42 (2003) pp. L1039-L1040 |Next Article| |Table of Contents|
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Express Letter
Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells
Changqing Chen,
Vinod Adivarahan,
Jinwei Yang,
Maxim Shatalov,
Edmundas Kuokstis and
Muhammad Asif Khan
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208, U.S.A.
(Received July 14, 2003; accepted for publication July 22, 2003)
We report a pn-junction ultraviolet light-emitting diode (LED) with peak emission at 363 nm using a-plane GaN-AlGaN multiple quantum wells over r-plane sapphire. The peak emission wavelength does not shift with increasing pump currents-therefore establishing the feasibility of high-efficiency non-polar light emitting devices.
URL:
http://jjap.jsap.jp/link?JJAP/42/L1039/
DOI: 10.1143/JJAP.42.L1039
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