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Jpn. J. Appl. Phys. 42 (2003) pp. L1433-L1435  |Next Article|  |Table of Contents|
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Letter

Direct Observation of Electromigration and Induced Stress in Cu Nanowire

Satoru Fujisawa, Takamaro Kikkawa^1,2 and Tokushi Kizuka³

National Institute of Advanced Industrial Science and Technology(AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
¹MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology(AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
²Research Center for Nanodevices and Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8527, Japan
³Institute of Materials Science, University of Tsukuba & Precursory Research for Embryonic Science and Technology, Japan Science and Technology Agency, 1-1-1 Tennoudai, Tsukuba 307-8573, Japan

(Received August 26, 2003; accepted October 10, 2003; published November 18, 2003)

We report the direct observation of electromigration and induced stress in the Cu nanowire. During the electromigration, the decrease in pulling stress in the nanowire is observed with the modification of the nanowire. When the nanowire reaches the stable state, the single crystal lattice of Cu appears in the nanowire. This suggests that electromigration could be used as method of a annealing of the nanowire.

URL: http://jjap.jsap.jp/link?JJAP/42/L1433/
DOI: 10.1143/JJAP.42.L1433

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