Jpn. J. Appl. Phys. 42 (2003) pp. L1492-L1494 |Next Article| |Table of Contents|
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Letter
The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
Shigeto Fukatsu,
Tomonori Takahashi,
Kohei M. Itoh,
Masashi Uematsu1,
Akira Fujiwara1,
Hiroyuki Kageshima1,
Yasuo Takahashi1 and
Kenji Shiraishi2
Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
1NTT Basic Research Laboratories, NTT Corporation, 3-1 Wakamiya, Morinosato, Atsugi 243-0198, Japan
2Institute of Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8577, Japan
(Received October 7, 2003; revised October 29, 2003; accepted October 30, 2003; published December 3, 2003)
The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.
URL:
http://jjap.jsap.jp/link?JJAP/42/L1492/
DOI: 10.1143/JJAP.42.L1492
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