Jpn. J. Appl. Phys. 43 (2004) pp. 192-196  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (121K)| |Buy This Article|

A Novel Negative Voltage Generator Circuit: Application of a Ferroelectric Capacitor to Low-Power LSIs

Kenji Toyoda, Michihito Ueda, Takashi Ohtsuka, Kiyoshi Morimoto and Kiyoyuki Morita

Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570-8501, Japan

(Received May 30, 2003; accepted September 19, 2003; published January 13, 2004)

In this paper, a novel voltage generator circuit using a ferroelectric capacitor is described. This circuit consists of two metal-oxide-semiconductor (MOS) transistors, a ferroelectric capacitor and a dielectric capacitor, which can convert a positive input voltage into a negative output voltage. We describe in detail the design and operation principles of the circuit. We have demonstrated the expected circuit operation and evaluated its performance characteristics such as voltage efficiency and verified, using an experimental circuit, that a negative voltage is continuously generated. The magnitude of the measured output voltage value was smaller than that of the simulation result, possibly due to the existence of parasitic resistance in the experimental circuit. The simulation results suggest that our circuit is suitable for reducing the standby leakage current of MOS transistors, one of the most serious power consumption-related problems in advanced CMOS LSIs.

URL: http://jjap.jsap.jp/link?JJAP/43/192/
DOI: 10.1143/JJAP.43.192


|Full Text PDF (121K)| |Buy This Article| Citation:


References | Citing Article (1)

  1. T. Nakamura, Y. Nakano, A. Kamisawa and H. Takasu: Appl. Phys. Lett. 65 (1994) 1522[AIP Scitation].
  2. T. Otsuka, M. Ueda, T. Nishikawa, K. Iijima and K. Morita: Int. Ferroelectr. 31 (2000) 117.
  3. M. Takahashi, H. Sugiyama, T. Nakaiso, K. Kodama, M. Noda and M. Okuyama: Jpn. J. Appl. Phys. 40 (2001) 2923[JSAP].
  4. M. Okuyama, M. Takahashi, K. Kodama, T. Nakaiso and M. Noda: Mat. Res. Soc. Symp. Proc. 655 (2001) p. CC13.10.3.
  5. M. Ueda, T. Otsuka, K. Toyoda, K. Morimoto and K. Morita: Proc. 13th IEEE Int. Symp. Applications of Ferroelectrics (ISAF 2002), Nara, Japan, 2002, p. 155.
  6. S. Kwack, S. Lee, J. Joo, B. Ko, B. Song, J. Park and K. Kwack: Proc. IEEE Reg. 10 Conf. 1999, Vol. 2, p. 864.
  7. K. Lim, S. Hong and K. Lee: Integr. Ferroelectr. 17 (1997) 97.

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information