Jpn. J. Appl. Phys. 43 (2004) pp. 2667-2671 |Previous Article| |Next Article| |Table of Contents|
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Preparation and Characterization of RuOx Thin Films by Liquid Delivery Metalorganic Chemical Vapor Deposition
Analysis Team, Memory R&D Division, Hynix Semiconductor Inc., 1 Hyangjeong, Hungduk, Cheongju 361-725, Korea
1Department of Semiconductor Engineering, Chungbuk National University, Cheongju, Chungbuk 361-763, Korea
2Department of Physics, Chungbuk National University, Cheongju, Chungbuk 361-763, Korea
3Division of Electronic Communication and Electrical Engineering, Yesou National University, Yeosu, Jeollanam 550-749, Korea
(Received May 14, 2003; revised October 17, 2003; accepted January 26, 2004; published May 11, 2004)
RuOx films were deposited by liquid delivery metalorganic chemical vapor deposition method using a new Ru(C8H13O2)3 precursor for the advanced capacitor electrode in Gbit-scale dynamic random access memory. Deposition was carried out on a TiN barrier layer in the range of 250–400°C and the ratio of the O2 flow rate to the total flow rate of Ar and O2 was varied from 20 to 80%. RuOx thin films were annealed at 650°C for 1 min with Ar, N2 or NH3 ambient. Film characterization was performed in terms of resistivity, crystal structure, surface morphology, microstructure and film purity. The resistivity depended on the impurity, grain density and crystalline structure of the film. The oxygen used to form Ru the oxide was found to eliminate the carbon and hydrogen elements in an organic source. The O2 flow ratio that changes the crystal structure of the films from Ru to RuO2 was found to be 40%. The metallic Ru phase forming a RuO2/Ru bilayer at the RuO2/TiN interface was observed at O2 flow ratios of 50% and 60%. The X-ray diffraction results indicate that the RuO2 phase and the silicidation are not observed regardless of the ambient gases. Ar was more effective than N2 and NH3 as an ambient gas for the postannealing of the Ru films.
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