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Jpn. J. Appl. Phys. 43 (2004) pp. 534-535  |Previous Article| |Next Article|  |Table of Contents|
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Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy

Hiroki Sugiyama, Haruki Yokoyama and Takashi Kobayashi

NTT Photonics Laboratories, 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan

(Received October 15, 2003; accepted November 21, 2003; published February 10, 2004)

We studied the thermal diffusion of Si atoms in delta-doped n-type InAlAs grown by metal-organic vapor-phase epitaxy using secondary ion mass spectroscopy (SIMS). In the case of high sheet concentration of around 1×10¹³ cm^-2, significant broadening of the Si profile was observed after postgrowth annealing in arsine ambient at >590°C. In contrast, broadening of the profile was suppressed at the concentration of about 3×10¹² cm^-2. Diffusivity of Si atom in delta-doped InAlAs was estimated from the SIMS profiles.

URL: http://jjap.jsap.jp/link?JJAP/43/534/
DOI: 10.1143/JJAP.43.534

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