Jpn. J. Appl. Phys. 43 (2004) pp. 5392-5397  |Previous Article| |Next Article|  |Table of Contents|
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Dielectric and Piezoelectric Properties in the BiScO3–PbTiO3–PbO·SnO2 Ternary System

Tae-Ho Song, Richard E. Eitel, Thomas R. Shrout and Clive A. Randall

Center for Dielectric Studies, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA

(Received March 25, 2004; accepted April 12, 2004; published August 10, 2004)

The effect of Sn substitution on the dielectric and piezoelectric properties of BiScO3–PbTiO3 was investigated in the ternary system, (1-x){(1-y)BiScO3yPbO·SnO2}–xPbTiO3 (x=0.43–0.63, y=0.25–0.75). The ferroelectric phase transition temperature near morphotropic phase boundary (MPB) decreased with increasing Sn content from 450°C (x, y=0.64, 0) down to ∼250°C for the composition with x, y=0.46, 0.75. Piezoelectric activity (d33=460–465 and kp=0.54) in Sn-substituted MPBs remained at similar levels to the pure 0.46BiScO3–0.64PbTiO3 MPB, with Sn content of up to y=0.5. However, further Sn-additions lead to decreased electromechanical performance and the formation of secondary phases such as SnO2. Broad temperature dependence of the permittivity near the ferroelectric phase transition was assessed by a diffuseness parameter δ, which generally decreased with firing temperature in the range of 1050–1250°C. The temperature of the permittivity maximum (Tmax) increased with measuring frequency, a characteristic consistent with relaxor ferroelectric materials.

URL: http://jjap.jsap.jp/link?JJAP/43/5392/
DOI: 10.1143/JJAP.43.5392


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References | Citing Articles (17)

  1. B. Jaffe, W. R. Cook and H. Jaffe: Piezoelectric Ceramics (Academic Press, Reported by R. A. N. Publishers, Marietta, Ohio, 1971).
  2. Y. Yamashita: Jpn. J. Appl. Phys. 33 (1994) 5328[JSAP].
  3. R. E. Eitel, C. A. Randall, T. R. Shrout, P. W. Rehrig, W. Hackenberger and S.-E. Park: Jpn. J. Appl. Phys. 40 (2001) 5999[JSAP].
  4. R. E. Eitel, C. A. Randall, T. R. Shrout and S. E. Park: Jpn. J. Appl. Phys. 41 (2002) 2099[JSAP].
  5. C. A. Randall, R. E. Eitel, T. R. Shrout, D. I. Woodward and I. M. Reaney: J. Appl. Phys. 93 (2003) 9271[AIP Scitation].
  6. R. E. Eitel, S.-E. Park, C. A. Randall and T. R. Shrout: U. S. Patent 6,685,849 (2004).
  7. R. E. Eitel, S. J. Zhang, T. R. Shrout, C. A. Randall and I. Levin: to be published in J. Appl. Phys. 96 (2004).
  8. Y. Inaguma, A. Miyaguchi, M. Yoshida, K. Tetsuhiro, Y. Shimojo, R. Wang and T. Sekiya: J. Appl. Phys. 95 (2004) 231[AIP Scitation].
  9. T.-H. Song, R. E. Eitel, T. R. Shrout, C. A. Randall and W. Hackenberger: Jpn. J. Appl. Phys. 42 (2003) 5181[JSAP].
  10. B. Jaffe, R. S. Roth and S. Marzullo: J. Res. Natl. Bur. Stand. 55 (1955) 239.
  11. S.-E. Park and T. R. Shrout: J. Appl. Phys. 82 (1997) 1804[AIP Scitation].
  12. ANSI/IEEE Std 176-1987 (1987).
  13. C. A. Randall, K. Manchul, J.-P. Kucera, W. Cao and T. R. Shrout: J. Amer. Ceram. Soc. 81 (1998) 677.
  14. T.-H. Song, R. E. Eitel, T. R. Shrout and C. A. Randall: unpublished.
  15. J. M. Herbert: Ceramic Dielectrics and Capacitors (Gordon and Breach Science Publishers, 1985).
  16. L. E. Cross: Ferroelectrics 3–4 (1987) 241.
  17. G. A. Smolensky: Sov. Phys. Solid State 2 (1960) 2584.
  18. G. A. Smolenskii, V. A. Bokov, V. A. Isupov, N. N. Krainik, R. E. Pasynkov and A. I. Sokolov: Ferroelectrics and Related Materials (Gordon and Breach Science Publishers S. A., New York, 1984).
  19. P. Philippe, J. P. Dougherty and T. R. Shrout: J. Mater. Res. 5 (1990) 2901.
  20. C. A. Randall, A. D. Hilton, D. J. Barber and T. R. Shrout: J. Mater. Res. 8 (1993) 880.
  21. N. Kim, S. J. Jang and T. R. Shrout: Proc. IEEE 7th Int. Symp. Appl. Ferroelectrics, 1990, p. 605.

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