Jpn. J. Appl. Phys. 43 (2004) pp. 54-60  |Table of Contents|
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Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions

Shih-hui Chen, Jeng Gong, Meng-chyi Wu and Alex Yu-kwen Su

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