Jpn. J. Appl. Phys. 43 (2004) pp. 6604-6608 |Previous Article| |Next Article| |Table of Contents|
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Preparation of m=1–2 Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
Akira Shibuya,
Minoru Noda,
Masanori Okuyama and
Keisuke Saito1
Area of Solid State Electronics, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
1BRUKER AXS K.K., 3-9-A Moriya-cho, Kanagawa-ku, Yokohama-shi, Kanagawa 221-0022, Japan
(Received May 19, 2004; accepted June 24, 2004; published September 22, 2004)
C-axis-oriented epitaxial natural-superlattice-structured Bi2MoO6–Bi3TiNbO9 (BM–BTN) (m=1–2) and Bi2WO6–Bi3TiNbO9 (BW–BTN) (m=1–2) films are grown by pulsed-laser deposition (PLD) on SrTiO3 (001) substrates. The c-lattice constant (6.738 nm) of the BM–BTN film is very close to that (6.54 nm) of the superlattice structure of one BM unit cell and two BTN unit cells. The c-lattice constant (2.089 nm) of the BW–BTN film is very close to that (2.07 nm) of the superlattice structure of one BW unit cell and one BTN unit cell. The long-range natural-superlattice-structure of BM and BTN films have been prepared on Pt(111)/TiO2/SiO2/Si substrates by PLD and oxygen postannealing at 650°C. X-ray diffractions clearly show the formation of the long-range superlattice of the 15.5 nm iterative layer, which corresponds to 50 unit cells consisting of (113)-oriented BM and (115)-oriented BTN. These BM BTN thin films exhibit good ferroelectricity with a 2Pr of 40 µC/cm2.
URL:
http://jjap.jsap.jp/link?JJAP/43/6604/
DOI: 10.1143/JJAP.43.6604
KEYWORDS:ferroelectric thin film, BLSF, Bi2MoO6, Bi2WO6, Bi3TiNbO9, natural superlattice, PLD
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